Phase change materials and their application to random access memory technology
By Simone Raoux, R. Shelby, J. Jordan-Sweet, B. Muñoz, Martin Salinga, Yi-Chou Chen, Y. Shih, E. Lai, Ming-Hsiu Lee. 2008
151 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/19448eb01c357e4b488f9a768e069543eb05bac2
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Electrical and Electronic Engineering
- A. Padilla
- Michele M. Franceschini
- B. Jackson
- Bülent N. Kurdi
- Matthew J. Breitwisch
- Rohit S. Shenoy
- Simone Raoux
- Kailash Gopalakrishnan
In Materials Chemistry
- A. Padilla
- Michele M. Franceschini
- B. Jackson
- Bülent N. Kurdi
- Matthew J. Breitwisch
- Rohit S. Shenoy
- Simone Raoux
- Kailash Gopalakrishnan
In Polymers and Plastics
Citations in the corpus
- Phase change memory technology (2010, background): “In fact, reduction in the melting temperature of phase change materials has been observed for very thin films[74], nanowires[75] and nanoparticles[76].”
- Phase Change Materials (2009, background): “This increase in crystallization temperature for small particles is similar to the increase in crystallization temperature for ultrathin films (49, 50, 52).”