Electronic switching in phase-change memories

By A. Pirovano, A. L. Lacaita, Augusto Benvenuti, F. Pellizzer, R. Bez. IEEE Transactions on Electron Devices, 2004

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Phase change memory technology (2010, background): “This effect is still not completely understood, but is attributed to a complex interplay between trapped charge, device current, and local electrical fields[45, 49].”
Phase-change random access memory: A scalable technology (2008, unknown): “impact ionization and carrier recombination [7].”
Phase-change materials for rewriteable data storage. (2007, background): “The phase-change alloys discovered in the past two decades have such fast crystallization kinetics that we can envisage their use in non-volatile memories that can compete in speed with dynamic random access memories (DRAM”
Low-field amorphous state resistance and threshold voltage drift in chalcogenide materials (2004, background): “7 eV [16] can be therefore recovered releasing the accumulated stress.”
Reliability Impact of Chalcogenide-Structure Relaxation in Phase-Change Memory (PCM) Cells—Part I: Experimental Study (2009, background): “The memory relies on the phase-change properties of a chalcogenide material, usually Ge2Sb2Te5 (GST), which can appear in either a crystalline or an amorphous phase with resistances differing by 2–3 orders of magnitude [2]–[4].”