Novel /spl mu/trench phase-change memory cell for embedded and stand-alone non-volatile memory applications

By F. Pellizzer, A. Pirovano, F. Ottogalli, M. Magistretti, M. Scaravaggi, P. Zuliani, M. Tosi, Augusto Benvenuti, P. Besana, S. Cadeo and 12 more. Digest of Technical Papers. 2004 Symposium on VLSI Technology, 2004., 2004

156 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/caf54365aa5d1b436361ea4ca9e08518fb95eaad

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In Electrical and Electronic Engineering

In Electronic, Optical and Magnetic Materials

In Materials Chemistry

Citations in the corpus

Phase change memory technology (2010, background): “[139] F.”
Hybrid cache architecture with disparate memory technologies (2009, methodology): “We based our parameters on searches of appropriate literature [8, 13, 14, 24 , 30] for typical density, latency, and energy numbers for the studied memory technologies, and then scale these to 45nm technology.”
Phase Change Materials (2009, background): “Some are derived from the mushroom cell [edge-contact structure (107), μTrench structure (108, 109), ring structure (110–113), pillar structure (114), lance structure (115)], whereas others are in-plane devices such as the bridge (32, 46) and line structures (46).”
Recovery and Drift Dynamics of Resistance and Threshold Voltages in Phase-Change Memories (2007, methodology): “While technological efforts are being devoted to improve the programming current consumption [3], [4] and the integration issues [ 5 ], [6], many fundamental issues have to be addressed, from both material and cell standpoints.”
Phase Change Memory (2008, background): “One approach is to construct the bottom electrode using a via side-wall liner (the thickness can be well controlled and less than 10nm) and then defining an orthogonal trench above the electrode into which the phase change material is deposited [ 8 ].”