Bias polarity dependent data retention of resistive random access memory consisting of binary transition metal oxide

By K. Kinoshita, Tetsuro Tamura, M. Aoki, Y. Sugiyama, Hitoshi Tanaka. 2006

205 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/d21acc23f45dad7ad065b70a18063e1979cfbf07

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. A. L. Lacaita
3. Yihong Wu
4. U. Russo
5. H. Philip Wong
6. Rainer Waser
7. R. Bruchhaus
8. Andrea Leonardo Lacaita

In Polymers and Plastics

1. Daniele Ielmini

Citations in the corpus

• Self-Accelerated Thermal Dissolution Model for Reset Programming in Unipolar Resistive-Switching Memory (RRAM) Devices (2009, background): “However, in order to account for experimental spreading, possible variations in CF parameters (ρCF, κCF, vG0, Ea) have to be taken into account, since they could arise from local variations in material composition (e.g., stoichiometric variations in NiOx filaments, metallic impurities diffused from ”
• Nonvolatile resistive switching in graphene oxide thin films (2009, background): “05) free from Forming process, where a grain structure was found with conductive atomic force microscopy and most current flows through grain boundaries to obviate the requirement of Forming (Kinoshita et al., 2006).”