Yoshinao Kumagai
Electronic, Optical and Magnetic Materials · 2001–2018
A researcher in the Science corpus: 12 papers; trusts 5 researchers and is trusted by 0 researchers here, as inferred from the citation graph.
Subfields
- Electronic, Optical and Magnetic Materials — 145 citations into it
- Materials Chemistry — 143 citations into it
Whom Yoshinao Kumagai trusts
Their strongest outbound trust, strongest first, inferred from their citations.
- Masataka Higashiwaki (in Electronic, Optical and Magnetic Materials)
- Akito Kuramata (in Electronic, Optical and Magnetic Materials)
- Shigenobu Yamakoshi (in Electronic, Optical and Magnetic Materials)
- Kohei Sasaki (in Electronic, Optical and Magnetic Materials)
- T. Masui (in Electronic, Optical and Magnetic Materials)
Papers from Yoshinao Kumagai's perspective
Ordered by how strongly the researchers Yoshinao Kumagai trusts endorse each paper. Same corpus, a different order for every researcher.
- Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
- Valence band ordering in β-Ga2O3 studied by polarized transmittance and reflectance spectroscopy
- 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
- High breakdown electric field in β-Ga2O3/graphene vertical barristor heterostructure
- High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
- State-of-the-art technologies of gallium oxide power devices
- Near unity ideality factor and Shockley-Read-Hall lifetime in GaN-on-GaN p-n diodes with avalanche breakdown
- The Physical Implementation of Quantum Computation
- Multipartite Entanglement Among Single Spins in Diamond (Science)
- NMR Based Quantum Information Processing: Achievements and Prospects
Their papers
- 1-kV vertical Ga2O3 field-plated Schottky barrier diodes (2017) — 508 citations
- State-of-the-art technologies of gallium oxide power devices (2017) — 260 citations
- Recent progress in Ga2O3 power devices (2016) — 869 citations
- Acceptor doping of β-Ga2O3 by Mg and N ion implantations (2018) — 184 citations
- Homoepitaxial growth of β-Ga2O3 layers by halide vapor phase epitaxy (2014) — 265 citations
- Halide vapor phase epitaxy of Si doped β-Ga2O3 and its electrical properties (2018) — 178 citations
- Current status of Ga2O3 power devices (2016) — 139 citations
- Temperature-dependent capacitance–voltage and current–voltage characteristics of Pt/Ga2O3 (001) Schottky barrier diodes fabricated on n––Ga2O3 drift layers grown by halide vapor phase epitaxy (2016) — 318 citations
- Anisotropy, phonon modes, and free charge carrier parameters in monoclinic β-gallium oxide single crystals (2015) — 145 citations
- On the origin of the 265 nm absorption band in AlN bulk crystals (2012) — 149 citations
- Growth and characterization of freestanding GaN substrates (2002) — 171 citations
- Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors (2001) — 254 citations