Preparation of Large Freestanding GaN Substrates by Hydride Vapor Phase Epitaxy Using GaAs as a Starting Substrate : Semiconductors

By Kensaku Motoki, T. Okahisa, N. Matsumoto, M. Matsushima, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, Tetsuya Hirano, M. Nakayama and 6 more. 2001

254 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ed8eb8c9ee8b82a1f0d75ec995a25ecf4ed5abaa

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In Condensed Matter Physics

1. T. Katona
2. Akira Hirano
3. Asif Khan
4. Yosuke Nagasawa
5. K. Balakrishnan

In Electronic, Optical and Magnetic Materials

1. Akira Hirano
2. Yosuke Nagasawa

Citations in the corpus

• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, methodology): “GaN substrates with TDD of lower than 106/cm2 are currently used for the production of LDs, and ELO-GaN has been replaced by GaN substrates [97,98] to produce LDs.”
• Ultraviolet light-emitting diodes based on group three nitrides (2008, methodology): “A 352-nm LED with an EQE of 1% was measured for a device grown on a free-standing GaN substrate, with a typical dislocation density of about 1 × 10 6 cm −2 (ref”