Growth and characterization of freestanding GaN substrates

By Kensaku Motoki, T. Okahisa, S. Nakahata, N. Matsumoto, H. Kimura, H. Kasai, K. Takemoto, K. Uematsu, M. Ueno, Yoshinao Kumagai and 2 more. 2002

171 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/06ea077ef04f04a57e21b1f92422b8dae2a991ec

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In Condensed Matter Physics

1. Akira Hirano
2. Yosuke Nagasawa

Citations in the corpus

• A Review of AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes on Sapphire (2018, methodology): “GaN substrates with TDD of lower than 106/cm2 are currently used for the production of LDs, and ELO-GaN has been replaced by GaN substrates [97,98] to produce LDs.”