Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance

By Ronghua Wang, Paul Saunier, X. Xing, Chuanxin Lian, Xiang Gao, Shiping Guo, Gregory L. Snider, P. Fay, Debdeep Jena, Huili Grace Xing. IEEE Electron Device Letters, 2010

147 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/3f7b93f0121b91d021928a1a91d632cfc403f470

How researchers see this paper

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In Atomic and Molecular Physics, and Optics

1. Tomás Palacios

In Condensed Matter Physics

1. Tomás Palacios
2. Xiang Gao
3. Shiping Guo
4. Dong Seup Lee

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Tomás Palacios
3. Shiping Guo
4. Dong Seup Lee

Citations in the corpus

• InAlN/GaN HEMTs With AlGaN Back Barriers (2011, background): “while devices with transconductances in excess of 800 mS/mm have been reported in enhancement-mode devices [3].”