InAlN/GaN HEMTs With AlGaN Back Barriers

By Dong Seup Lee, Xiang Gao, Shiping Guo, Tomás Palacios. IEEE Electron Device Letters, 2011

164 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/c4cf6482a7e0b5ea79bd1368423b9bc922524348

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In Condensed Matter Physics

1. Xiang Gao
2. Shiping Guo
3. Dong Seup Lee

Citations in the corpus

• 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011, background): “However, as the gate length is scaled below 50 nm, the SCEs become evident, and the VT decreases rapidly (∆VT ≈ 0.7 V).”