205-GHz (Al,In)N/GaN HEMTs
By Haifeng Sun, A. Alt, H. Benedickter, E. Feltin, Jean-Francois Carlin, M. Gonschorek, N. Grandjean, C. Bolognesi. IEEE Electron Device Letters, 2010
157 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electronic, Optical and Magnetic Materials
View Paper: https://www.semanticscholar.org/paper/4bb97251d7f969fb1d0b605bad0a088116d69337
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Citations in the corpus
- InAlN/GaN HEMTs With AlGaN Back Barriers (2011, background): “reported a current gain cutoff frequency fT of 205 GHz in a 55-nm-gate-length device with an 11-nm-thick InAlN barrier [4], while Lee et al.”
- 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011, background): “11-nm top-barrier thickness (InAlN: 10 nm, AlN: 1 nm) [7], while a 30-nm-gate-length device demonstrated an fT of 245 GHz with a 6.”
- Scaling of GaN HEMTs and Schottky Diodes for Submillimeter-Wave MMIC Applications (2013, background): “This trend is typically observed for S–D unscaled devices by other groups [10], [33].”
- 245-GHz InAlN/GaN HEMTs With Oxygen Plasma Treatment (2011, background): “The same group reported a 55-nm-gate-length device with an fT of 205 GHz (fmax = 191 GHz) owing to the selective removal of the passivation [ 11 ].”
- InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (2012, methodology): “fT > 200 GHz using InAlN/GaN heterostructures with alloyed ohmic contacts [8]–[13].”
- The Study of Self-Heating and Hot-Electron Effects for AlGaN/GaN Double-Channel HEMTs (2012, unknown): “prevent the short-channel effect [42].”