Effect of Gate Leakage in the Subthreshold Characteristics of AlGaN/GaN HEMTs

By J. Chung, J. C. Roberts, E. Piner, Tomas Palacios. IEEE Electron Device Letters, 2008

185 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/8231e7083247cd70fc44c75ac2827b3548905453

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Xiang Gao
2. Shiping Guo

In Electrical and Electronic Engineering

1. Debdeep Jena

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Shiping Guo

Citations in the corpus

• Gate-Recessed Enhancement-Mode InAlN/AlN/GaN HEMTs With 1.9-A/mm Drain Current Density and 800-mS/mm Transconductance (2010, background): “The SS value can also be adversely affected by the gate leakage, thus leading to an artificially high extracted Dit [13].”