InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz

By Y. Yue, Zongyang Hu, Jia Guo, B. Sensale‐Rodriguez, Ronghua Wang, F. Faria, T. Fang, B. Song, Xiang Gao, Shiping Guo and 3 more. IEEE Electron Device Letters, 2012

320 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/9ec48745da37046e67d216f0fe846d709c7a3387