300-GHz InAlN/GaN HEMTs With InGaN Back Barrier

By Dong Seup Lee, Xiang Gao, Shiping Guo, David P. Kopp, P. Fay, Tomás Palacios. IEEE Electron Device Letters, 2011

256 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/680af91af7a7535ecb34e437e9cb723fa67b781d

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In Condensed Matter Physics

1. Xiang Gao
2. Shiping Guo

Citations in the corpus

• InAlN/AlN/GaN HEMTs With Regrown Ohmic Contacts and $f_{T}$ of 370 GHz (2012, methodology): “83N/AlN/GaN heterostructures offer higher charge density for thin barrier thicknesses (< 10 nm) due to stronger polarization discontinuity than the conventional AlGaN/GaN heterostructure [4]–[13], making them suitable for ultrascaled HEMTs.”