AlN/GaN Insulated-Gate HEMTs With 2.3 A/mm Output Current and 480 mS/mm Transconductance

By T. Zimmermann, D. Deen, Yu Cao, J. Simon, P. Fay, Debdeep Jena, Huili Grace Xing. IEEE Electron Device Letters, 2008

175 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/ffb0672d7892b0b0d56b63dcada6506cd9f24f91

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In Condensed Matter Physics

1. Xiang Gao
2. Shiping Guo
3. Dong Seup Lee

In Electronic, Optical and Magnetic Materials

1. Xiang Gao
2. Shiping Guo
3. Dong Seup Lee

Citations in the corpus

• 300-GHz InAlN/GaN HEMTs With InGaN Back Barrier (2011, background): “Some examples of these new barrier materials include InAlN [3], Al-rich AlGaN [4], and AlN [ 5 ].”