High-Performance Microwave Gate-Recessed AlGaN/AlN/GaN MOS-HEMT With 73% Power-Added Efficiency

By Y. Hao, Ling Yang, Xiao-hua Ma, Jigang Ma, M. Cao, Caiyuan Pan, Chong Wang, Jincheng Zhang. IEEE Electron Device Letters, 2011

141 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/ba6fab19f05f1b664c9ddb1bec3d585edb02b6ef