1200-V Normally Off GaN-on-Si Field-Effect Transistors With Low Dynamic on -Resistance

By R. Chu, A. Corrion, Mary Y. Chen, Ray Li, D. Wong, D. Zehnder, B. Hughes, K. Boutros. IEEE Electron Device Letters, 2011

354 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/18f87567c0ab24e2555be99f095cca0050837bf9

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In Condensed Matter Physics

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Citations in the corpus

Maximizing the Performance of 650-V p-GaN Gate HEMTs: Dynamic RON Characterization and Circuit Design Considerations (2017, methodology): “sistor can be fabricated using p-GaN gate technique [3]–[7], gate recess [7]–[9] or plasma treatment [10]–[12].”
Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “Surface trapping can be effectively suppressed or compensated by multiple field plates and advanced dielectric passivation techniques [64]–[70].”
600-V Normally Off ${\rm SiN}_{x}$ /AlGaN/GaN MIS-HEMT With Large Gate Swing and Low Current Collapse (2013, methodology): “, Al2O3, SiO2, and SiNx ) have been employed to convert Schottky gate to MIS gate [3], [4], [10]–[14].”
Instability in Half-Bridge Circuits Switched With Wide Band-Gap Transistors (2014, background): “rably higher specific on-resistance of this topology means that practical devices have larger die area than similarly rated SiC vertical-channel JFETs and GaN HFETs [1], [33], [34].”
Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges (2016, neutral): “(f) Hybrid MIS-HFET [9], [11], [33], [36], [37], [44].”
Tri-Gate Normally-Off GaN Power MISFET (2012, background): “First of all, low on-resistance (Ron) is difficult to achieve with the conventional normally-off GaN technologies, such as plasma treatment [2]–[5] and gate recess [6]–[8] which degrade channel mobility.”
Charge Storage Mechanism of Drain Induced Dynamic Threshold Voltage Shift in ${p}$ -GaN Gate HEMTs (2019, background): “Such a sharp change in CGD is typically caused by the pinch-off effect of a field plate [30].”
Effective Passivation of AlGaN/GaN HEMTs by ALD-Grown AlN Thin Film (2012, neutral): “current collapse at high-drain-bias switching [3].”
Application-based review of GaN HFETs (2014, background): “In fact, most of the leading GaN device manufacturers such as EPC, Panasonic, HRL, Transphorm, and IR have stated that dynamic Rds-on in their devices is no longer a substantial issue [5],[7],[14],[23],[24].”