Yimen Zhang

Materials Chemistry · 2020

A researcher in the Science corpus: 1 paper; trusts 6 researchers and is trusted by 0 researchers here, as inferred from the citation graph.

Subfields

Whom Yimen Zhang trusts

Their strongest outbound trust, strongest first, inferred from their citations.

  1. Akito Kuramata (in Electronic, Optical and Magnetic Materials)
  2. Shigenobu Yamakoshi (in Electronic, Optical and Magnetic Materials)
  3. Kohei Sasaki (in Electronic, Optical and Magnetic Materials)
  4. Masataka Higashiwaki (in Electronic, Optical and Magnetic Materials)
  5. Tsunenobu Kimoto (in Electrical and Electronic Engineering)
  6. T. Masui (in Electronic, Optical and Magnetic Materials)

Papers from Yimen Zhang's perspective

Ordered by how strongly the researchers Yimen Zhang trusts endorse each paper. Same corpus, a different order for every researcher.

  1. Device-Quality β-Ga2O3 Epitaxial Films Fabricated by Ozone Molecular Beam Epitaxy
  2. 3.8-MV/cm Breakdown Strength of MOVPE-Grown Sn-Doped $\beta $ -Ga2O3 MOSFETs (IEEE Electron Device Letters)
  3. High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes
  4. State-of-the-art technologies of gallium oxide power devices
  5. High-quality β-Ga2O3 single crystals grown by edge-defined film-fed growth
  6. Gallium oxide (Ga2O3) metal-semiconductor field-effect transistors on single-crystal β-Ga2O3 (010) substrates
  7. Field-Plated Ga2O3 MOSFETs With a Breakdown Voltage of Over 750 V (IEEE Electron Device Letters)
  8. Si-Ion Implantation Doping in β-Ga2O3 and Its Application to Fabrication of Low-Resistance Ohmic Contacts
  9. 1.85 kV Breakdown Voltage in Lateral Field-Plated Ga2O3 MOSFETs (IEEE Electron Device Letters)
  10. Enhancement-Mode Ga2O3 Vertical Transistors With Breakdown Voltage >1 kV (IEEE Electron Device Letters)

Their papers