Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain

By D. Abdi, Mamidala Jagadesh Kumar. IEEE Journal of the Electron Devices Society, 2014

282 citations recorded by the source corpus.

In this paper, we have demonstrated that overlapping the gate on the drain can suppress the ambipolar conduction, which is an inherent property of a tunnel field effect transistor (TFET). Unlike in the conventional TFET where the gate controls the tunneling barrier width at both source-channel and channel-drain interfaces for different polarity of gate voltage, overlapping the gate on the drain limits the gate to control only the tunneling barrier width at the source-channel interface irrespective of the polarity of the gate voltage. As a result, the proposed overlapping gate-on-drain TFET exhibits suppressed ambipolar conduction even when the drain doping is as high as 1 × 1019 cm-3.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/d9237b2272f30862a673a2be3f3ca1a0e1ef37f8

How researchers see this paper

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In Electrical and Electronic Engineering

1. Shubham Sahay
2. Mamidala Jagadesh Kumar
3. D. Abdi

Citations in the corpus

• Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX (2015, methodology): “But the unique property of ambipolar conduction in TFETs limits their utility for digital circuit applications [13], [14].”
• In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor (2014, background): “TUNNEL field effect transistors are very promising candidates for future low power applications [1]–[5].”