An analysis on the ambipolar current in Si double-gate tunnel FETs

By Hraziia, A. Vladimirescu, A. Amara, C. Anghel. 2012

199 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/a7a3e1b71fb8a22d8000022ebab5f8207c3746b8

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In Electrical and Electronic Engineering

1. Shubham Sahay
2. Mamidala Jagadesh Kumar
3. D. Abdi

Citations in the corpus

• Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain (2014, methodology): “underlapped, lower drain doping and high bandgap drain) reported earlier [2], [8]–[11], the gate is present only over the intrinsic channel region.”
• Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX (2015, background): “But the unique property of ambipolar conduction in TFETs limits their utility for digital circuit applications [13], [14].”