Improved Subthreshold and Output Characteristics of Source-Pocket Si Tunnel FET by the Application of Laser Annealing

By Hsu-Yu Chang, B. Adams, P. Chien, Jiping Li, Jason C. S. Woo. IEEE Transactions on Electron Devices, 2013

140 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/676554b32b477414f4ead8ec2b02b9b76012bb5d

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In Electrical and Electronic Engineering

1. Mamidala Jagadesh Kumar
2. D. Abdi
3. Shubham Sahay

Citations in the corpus

• In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor (2014, background): “Fulfilling the above requirements of realizing a narrow N+ pocket in a PNPN TFET is a technological challenge [9]–[11], [13].”