Low-Voltage Tunnel Transistors for Beyond CMOS Logic

By Alan C. Seabaugh, Qin Zhang. Proceedings of the IEEE, 2010

1,481 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/b819d76571d9acad5879c1785345c886b80ac283

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In Electrical and Electronic Engineering

Citations in the corpus

Controlling the Drain Side Tunneling Width to Reduce Ambipolar Current in Tunnel FETs Using Heterodielectric BOX (2015, background): “THE tunnel FET (TFET) has been proposed as a replacement of the standard CMOS for low-power applications [1]–[4].”
In-Built N+ Pocket p-n-p-n Tunnel Field-Effect Transistor (2014, background): “TUNNEL field effect transistors are very promising candidates for future low power applications [1]–[5].”
Overview of Beyond-CMOS Devices and a Uniform Methodology for Their Benchmarking (2013, background): “Tunneling FETs (TFETs) [12] are considered under three material options: homojunction III–”
Inverters With Strained Si Nanowire Complementary Tunnel Field-Effect Transistors (2013, background): “BAND-to-band tunneling field-effect transistors (TFETs) are very attractive for ultralow power applications because of their potential for overcoming the 60 mV/dec limit of the inverse subthreshold slope (SS) in conventional MOSFETs at 300 K [1], [2].”
Tunnel Field-Effect Transistors in 2-D Transition Metal Dichalcogenide Materials (2015, background): “These factors are considered in the analytic equation for the current in the ON-state of a TFET [36]:”
Benchmarking of Beyond-CMOS Exploratory Devices for Logic Integrated Circuits (2015, background): “Their exploratory research scope included a wider range of exploratory materials, switching mechanisms, and devices.”
Tunnel Field-Effect Transistors: State-of-the-Art (2014, background): “This paper updates comparisons provided in [1] with special attention given to the measured transistor reports of SS below 60 mV/decade.”
Controlling Ambipolar Current in Tunneling FETs Using Overlapping Gate-on-Drain (2014, background): “Tunnel field effect transistor, as a promising future low power device, comes with advantages like lower leakage current, less than 60 mV/decade subthreshold swing (SS) at room temperature and less susceptibility of short channel effects [1]–[7].”