Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs

By M. Chu, Yong-Hui Sun, U. Aghoram, S. Thompson. 2009

367 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/941e036d1e31e103f0a6da9d1d07fb83fa4fee59

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Biomedical Engineering

1. C. Eom
2. Ting Zhu
3. Ho Won Jang
4. Ju Li

In Electrical and Electronic Engineering

1. C. Eom
2. Ting Zhu
3. Yu Wang
4. Ho Won Jang
5. Ju Li

Citations in the corpus

• Ultra-strength materials (2010, background): “Strained Silicon technology is now advertised as one of the major advancements postponing the eventual breakdown of Moore’s law [35,39].”
• Tailoring a two-dimensional electron gas at the LaAlO3/SrTiO3 (001) interface by epitaxial strain (2010, methodology): “the known polar displacements in the strained SrTiO3 layer using the Berry phase method (30,31). The critical thickness tc in the presence of a STO polarization can be estimated as follows: tc =δε/eE (1) where δε= eε g + ε VBMSTO −ε VBM ( LAO ), ε g is the band gap of SrTiO3, STO ε VBM and LAO ε VBM”