Fundamentals of Carrier Transport, 2nd edn

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Charge-Based MOS Transistor Modeling: The EKV Model for Low-Power and RF IC Design (2006, background): “2, actually arises as an approximation of [122, 123, 129]”
Electrical and thermal transport in metallic single-wall carbon nanotubes on insulating substrates (2006, methodology): “This total, effective electron MFP is obtained from Matthiessen’s approximation [34] as”
Uniaxial-process-induced strained-Si: extending the CMOS roadmap (2006, background): “There is also a fair amount of uncertainty in surface roughness scattering particularly on a (110) wafer since the commonly used universal mobility versus effective oxide field Eeff applies only to the (100) substrate [55], [56].”
Carrier transport in HfO/sub 2//metal gate MOSFETs: physical insight into critical parameters (2006, methodology): “To complete the study, we have made the calculation of the RCS-limited mobility μRCS,theo for electrons using the momentum relaxation time approach [36].”
Essential physics of carrier transport in nanoscale MOSFETs (2000, methodology): “(See Chapter 9 in [25] for an alternative derivation of this result.”