Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime

By Ken Uchida, T. Krishnamohan, Krishna C. Saraswat, Yoshio Nishi. IEEE InternationalElectron Devices Meeting, 2005. IEDM Technical Digest., 2005

169 citations recorded by the source corpus.

Subfields: Biomedical Engineering, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/09f9991c42e7f62465e7fb6dd682128eebf82abf

How researchers see this paper

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In Biomedical Engineering

1. Kelin J. Kuhn

In Electrical and Electronic Engineering

1. S. Thompson
2. Kelin J. Kuhn
3. Ryosho Nakane
4. Bevan M. Baas
5. Aaron Stillmaker
6. Qiang Li
7. Kei May Lau

Citations in the corpus

• Carrier-Transport-Enhanced Channel CMOS for Improved Power Consumption and Performance (2008, background): “change the effective mass itself [30], [39].”
• The Effect of General Strain on the Band Structure and Electron Mobility of Silicon (2007, result): “mobility parallel (perpendicular) to stress results from the effective mass change only and is found to be in good agreement with experimental data [23], [37].”
• Uniaxial-process-induced strained-Si: extending the CMOS roadmap (2006, background): “98m0) and some further improvement is possible for stresses that warp the conduction valleys and lower mt [27].”
• Considerations for Ultimate CMOS Scaling (2012, background): “vertical field (in contrast to tensile biaxial strain where the gains are significantly reduced at a higher vertical field [98], [99], [102], [103]).”