Physics of strain effects in semiconductors and metal-oxide-semiconductor field-effect transistors

By Y. Sun, S. Thompson, Toshikazu Nishida. 2007

492 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/767a83f4a58af57d99cf2aa43dfe3463ba4165bc

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In Electrical and Electronic Engineering

1. D. Fleetwood
2. S. Thompson
3. Woo-Tae Park

Citations in the corpus

• Radiation Effects in Advanced Multiple Gate and Silicon-on-Insulator Transistors (2013, background): “Alternatively, one can make use of globally strained substrates, like biaxial tensile strained silicon (sSi) [15] or sSi-on-Insulator (sSOI), whereby higher stresses are created in the channel ( 1 GPa), but this is only favorable for the electron mobility.”
• Review: Semiconductor Piezoresistance for Microsystems (2009, background): “Reprinted with permission from Sun [73], © 2007 American Institute of Physics.”
• Strain: A Solution for Higher Carrier Mobility in Nanoscale MOSFETs (2009, background): “At the same time, the point DOS for (110) pMOSFETs does not change much with stress, whereas the DOS for (100) pMOSFETs increases significantly (Figure 9d ), allowing more holes to occupy the ground state, as shown in Figure 9e.”