Uniaxial-process-induced strained-Si: extending the CMOS roadmap
By S. Thompson, Guangyu Sun, Y. Choi, Toshikazu Nishida. IEEE Transactions on Electron Devices, 2006
572 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/0891b2312552ce8d576271d043ec539a413eed28
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In Electrical and Electronic Engineering
Citations in the corpus
- Thermo-mechanical reliability of 3-D ICs containing through silicon vias (2009, background): “It has been reported that 100 MPa of stress can change more than 7% of carrier mobility in MOSFET devices [3].”