GaN-based optoelectronics on silicon substrates

By A. Krost, Armin Dadgar. 2002

269 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/0d1611ded3423d0921f193cd0d2d228742b07894

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Condensed Matter Physics

1. Shu Yang
2. Kuang Sheng
3. Shaowen Han
4. Kevin J. Chen

In Electrical and Electronic Engineering

1. Shu Yang
2. Kuang Sheng
3. Kevin J. Chen
4. Shaowen Han

Citations in the corpus

• Dynamic On-Resistance in GaN Power Devices: Mechanisms, Characterizations, and Modeling (2019, background): “Tremendous efforts have been devoted to the epitaxial growth aiming at managing the relatively large mismatch of lattice constant (∼17%) and thermal expansion coefficient (∼54%) between (0001) GaN and (111) Si [9], [10].”