Atomic Arrangement at the AlN/Si(110) Interface
By O. Contreras, F. Ruiz-Zepeda, Armin Dadgar, A. Krost, F. Ponce. 2003
133 citations recorded by the source corpus.
Subfields: Biomedical Engineering, Condensed Matter Physics, Electrical and Electronic Engineering
View Paper: https://www.semanticscholar.org/paper/7469fded368695b1cc902a1af61799eccb04659a
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In Condensed Matter Physics
In Electrical and Electronic Engineering
Citations in the corpus
- GaN on Si Technologies for Power Switching Devices (2013, methodology): “a large diameter by metal–organic chemical vapor deposition (MOCVD) technique [1]–[5].”