Band gap renormalization and Burstein-Moss effect in silicon- and germanium-doped wurtzite GaN up to 10 20 cm − 3

By M. Feneberg, Sarah Osterburg, Karsten Lange, C. Lidig, B. Garke, R. Goldhahn, E. Richter, C. Netzel, M. Neumann, N. Esser and 5 more. 2014

145 citations recorded by the source corpus.

Subfields: Condensed Matter Physics, Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/f6932afb5bd60f4da487fd95f339568db9f1d98e