First-principles study of point defects in rutileTiO2−x

By E. Cho, Seungwu Han, H. Ahn, Kwang-Ryeol Lee, S. K. Kim, C. S. Hwang. 2006

184 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/b80b43b386a7dd0425c82fba6474c9b361f5abd5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Keum Do Kim
2. C. S. Hwang
3. D. Kwon
4. Daniele Ielmini

In Materials Chemistry

1. Keum Do Kim
2. C. S. Hwang
3. Daniele Ielmini

Citations in the corpus

• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “This is because other parts of the TiO 2 film, which may contain a large portion of oxygen-deficient TiO x phase (or even metal atoms), may also contribute to electrical conductio”
• Characterisation of titanium oxide layers using Raman spectroscopy and optical profilometry: Influence of oxide properties (2019, background): “The presence of oxygen vacancies at the oxide surface would influence the adsorption of molecules [54].”