Emerging memories: resistive switching mechanisms and current status

By Doo Seok Jeong, Reji Thomas, R. Katiyar, J. Scott, Hermann Kohlstedt, A. Petraru, C. S. Hwang. Reports on progress in physics. Physical Society, 2012

1,027 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/4aa51a1301ad87216f8e37130f5c0db15bdcf3f5

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Uwe Schroeder
2. Thomas Mikolajick
3. I. Fina
4. Vincent Garcia
5. J. MacManus‐Driscoll
6. M. Lira-Cantú
7. B. Dkhil
8. G. Niklasson

In Materials Chemistry

1. Uwe Schroeder
2. Thomas Mikolajick
3. Vincent Garcia
4. Manuel Bibes
5. I. Fina
6. J. MacManus‐Driscoll
7. M. Lira-Cantú
8. B. Dkhil

In Polymers and Plastics

1. M. Lira-Cantú
2. B. Dkhil
3. G. Niklasson
4. A. Hagfeldt
5. Claes-Goran Granqvist

Citations in the corpus

• Ferroelectric tunnel junctions for information storage and processing (2014, background): “The widespread development of these memories is however limited owing to the capacitive readout of the information (the polarization) that prevents the scalability of FeRAMs up to gigabit densities and necessitates the rewriting of information after readout (destructive readout) 2 .”