Anode-interface localized filamentary mechanism in resistive switching of TiO2 thin films

By Keum Do Kim, Byung Joon Choi, Y. C. Shin, Seol Choi, C. S. Hwang. 2007

419 citations recorded by the source corpus.

Subfields: Cellular and Molecular Neuroscience, Cognitive Neuroscience, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/7178ab17561dccb9babbc9f4e53f7af8d508cdab

How researchers see this paper

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In Electrical and Electronic Engineering

1. Zhaoping Liu
2. Xufeng Zhou
3. Daniele Ielmini
4. Shimeng Yu

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[13] Kim KM, Choi BJ, Shin YC, Choi S, Hwang CS.”
• Highly scalable hafnium oxide memory with improvements of resistive distribution and read disturb immunity (2009, background): “Since the SET process is a re-breakdown of the recovery oxide layer, the low Weibull slope is expected due to the very thin (2~3 nm) [4] and defective recovered oxide layer [5].”