Atomic structure of conducting nanofilaments in TiO2 resistive switching memory.
By D. Kwon, Keum Do Kim, Jae Hyuck Jang, J. Jeon, Min Hwan Lee, G. Kim, Xiang-Shu Li, G. Park, Bora Lee, Seungwu Han and 2 more. Nature Nanotechnology, 2010
1,966 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/919411a2de4ff06b97e0982a949f6b24f15c66bb
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In Electrical and Electronic Engineering
- Daniele Ielmini
- Shimeng Yu
- H. Philip Wong
- Ximeng Guan
- Rainer Waser
- Federico Nardi
- David C. Gilmer
- S. Larentis
In Materials Chemistry
- H. Philip Wong
- Shimeng Yu
- Rainer Waser
- R. Bruchhaus
- Daniele Ielmini
- Ximeng Guan
- Giacomo Indiveri
- Jie Deng
Citations in the corpus
- Thermochemical resistive switching: materials, mechanisms, and scaling projections (2011, background): “Similarly, suboxide compositions at the CF are routinely observed in bipolar-switching VCM devices [21,22,31].”
- A fast, high-endurance and scalable non-volatile memory device made from asymmetric Ta2O(5-x)/TaO(2-x) bilayer structures. (2011, background): “We believe that the reduction in current will scale down to the reported nanofilament size of just a few nanometre”
- Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[14] Kwon DH, Kim KM, Jang JH, Jeon JM, Lee MH, Kim GH, et al.”
- Modeling the Universal Set/Reset Characteristics of Bipolar RRAM by Field- and Temperature-Driven Filament Growth (2011, background): “The resistivity of such suboxide phases may be far higher than their metallic counterparts [13].”