Nanofilamentary resistive switching in binary oxide system; a review on the present status and outlook

By Keum Do Kim, Doo Seok Jeong, C. S. Hwang. Nanotechnology, 2011

604 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/894884b305bc9daffd3c9bf34d55ede91d5a04b1

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. H. Philip Wong
3. Shimeng Yu
4. Ximeng Guan
5. Ilia Valov
6. Federico Nardi
7. David C. Gilmer
8. Jie Deng

In Materials Chemistry

1. H. Philip Wong
2. Daniele Ielmini
3. Jie Deng

In Polymers and Plastics

1. H. Philip Wong
2. Daniele Ielmini

Citations in the corpus

• In-memory computing with resistive switching devices (2018, background): “1b, unipolar RRAMs have also been presented, where the set and reset processes both occur under the same voltage polarity because of the dominant role of Joule heating in creating and dissolving the CF 20,21 .”