Identification of a determining parameter for resistive switching of TiO2 thin films

By C. Rohde, Byung Joon Choi, Doo Seok Jeong, Seol Choi, J. S. Zhao, C. S. Hwang. 2005

326 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/8b3024368b7eb44edede97b85a8f03d7bad9fe5a

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Keum Do Kim
2. C. S. Hwang
3. Shibing Long
4. Zhaoping Liu
5. Yihong Wu
6. D. Kwon
7. Wen Wang
8. Xufeng Zhou

In Electronic, Optical and Magnetic Materials

1. Wen Wang

In Materials Chemistry

1. Keum Do Kim
2. C. S. Hwang
3. Yihong Wu
4. Wen Wang
5. Daniele Ielmini

Citations in the corpus

• Mechanism of nonvolatile resistive switching in graphene oxide thin films (2011, background): “[42] Rohde C, Choi BJ, Jeong DS, Choi S, Zhao JS, Hwang CS.”
• Atomic structure of conducting nanofilaments in TiO2 resistive switching memory. (2010, background): “In the fuse–antifuse mechanism, in which the interplay between the thermal effect and the redox reaction in the filament and its vicinity has a crucial role, metallic filaments are created through the insulator matrix during the electroforming process, and are fused as a result of Joule heating and ”
• Nonpolar Nonvolatile Resistive Switching in Cu Doped $\hbox{ZrO}_{2}$ (2008, background): “It has been reported that the Icomp is a key parameter which influences the value of reset current (Ireset, defined as the peak current during the reset process) and the ON-state resistance (Ron) for NiO- and TiO2-based ReRAM [5], [6].”