Effect of high-pressure oxygen annealing on negative bias illumination stress-induced instability of InGaZnO thin film transistors
By K. Ji, J. I. Kim, H. Jung, Se Yeob Park, R. Choi, Un Ki Kim, C. S. Hwang, Daeseok Lee, H. Hwang, Jae Kyeong Jeong. 2011
275 citations recorded by the source corpus.
Subfields: Electrical and Electronic Engineering, Materials Chemistry, Polymers and Plastics
View Paper: https://www.semanticscholar.org/paper/e57d5494ab4a96c8f64a4abb18bc684614304edd
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In Electrical and Electronic Engineering
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Citations in the corpus
- Role of dopants as a carrier suppressor and strong oxygen binder in amorphous indium-oxide-based field effect transistor (2014, background): “Among the ranges of defects, the negative bias illumination stress instability is often attributed to oxygen vacancy defects.(50,51) The possibility of an oxygen vacancy defect is when a neutral oxygen vacancy defect accepts a hole carrier to form a positive oxygen vacancy defect where an oxygen vac”