Localized switching mechanism in resistive switching of atomic-layer-deposited TiO2 thin films

By Keum Do Kim, Byung Joon Choi, C. S. Hwang. 2007

210 citations recorded by the source corpus.

Subfields: Electrical and Electronic Engineering, Polymers and Plastics

View Paper: https://www.semanticscholar.org/paper/c8d64f4ebc9943b922499d46b394b360459819bc

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electrical and Electronic Engineering

1. Daniele Ielmini
2. Andrea Leonardo Lacaita
3. U. Russo
4. H. Philip Wong
5. Rainer Waser
6. R. Bruchhaus
7. Shimeng Yu

In Polymers and Plastics

1. Daniele Ielmini
2. Andrea Leonardo Lacaita

Citations in the corpus

• Filament Conduction and Reset Mechanism in NiO-Based Resistive-Switching Memory (RRAM) Devices (2009, background): “Several physical interpretations for the switching processes have been proposed, including trap charging in the dielectric [5], space-charge-limited conduction processes [16], ion conduction and electrodeposition [7], [13], Mott transition [17], and Joule heating [6].”