Fumihiro Matsukura
Atomic and Molecular Physics, and Optics · 2000–2015
A researcher in the Science corpus: 29 papers; trusts 6 researchers and is trusted by 29 researchers here, as inferred from the citation graph.
Subfields
- Atomic and Molecular Physics, and Optics — 157 citations into it; #484 of 7,135 by trust here, #75 by citations
- Electronic, Optical and Magnetic Materials — 120 citations into it; #236 of 2,886 by trust here, #575 by citations
- Materials Chemistry — 95 citations into it; #1,103 of 11,513 by trust here, #998 by citations
Whom Fumihiro Matsukura trusts overall
Their strongest outbound trust, strongest first, inferred from their citations.
Who trusts Fumihiro Matsukura overall
- T. Dietl
- Hideo Ohno
- T. Jungwirth
- Shengwei Jiang
- Michihiko Yamanouchi
- Daichi Chiba
- J. Shan
- K. Mak
- J. Sinova
- Cheng Gong
Papers from Fumihiro Matsukura's perspective
Ordered by how strongly the researchers Fumihiro Matsukura trusts endorse each paper. Same corpus, a different order for every researcher.
- Multiferroic and magnetoelectric materials (Nature)
- Spin transfer in nanomagnetic devices with perpendicular anisotropy
- Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory
- Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM (2008 IEEE International Electron Devices Meeting)
- Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB∕MgO∕CoFeB magnetic tunnel junctions
- Analysis of oxygen induced anisotropy crossover in Pt/Co/MOx trilayers
- I and J
- Current-induced magnetization reversal in nanopillars with perpendicular anisotropy (IEEE International Magnetics Conference)
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors
- Spin polarization of tunneling current from ferromagnet/Al2O3 interfaces using copper-doped aluminum superconducting films
Their papers
- Control of magnetism by electric fields. (2015) — 896 citations
- Room-temperature ferromagnetism in zincblende CrSb grown by molecular-beam epitaxy (2001) — 181 citations
- Zener model description of ferromagnetism in zinc-blende magnetic semiconductors (2000) — 7,012 citations
- Effect of low-temperature annealing on (Ga,Mn)As trilayer structures (2003) — 182 citations
- Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors (2000) — 1,241 citations
- Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature (2008) — 1,445 citations
- Electric-field control of ferromagnetism (2000) — 1,807 citations
- High Mobility Thin Film Transistors with Transparent ZnO Channels (2003) — 269 citations
- Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007) — 477 citations
- A ferromagnetic III–V semiconductor: (Ga,Mn)As (2001) — 141 citations
- Current-induced domain-wall switching in a ferromagnetic semiconductor structure (2004) — 614 citations
- Experimental probing of the interplay between ferromagnetism and localization in (Ga, Mn)As (2009) — 201 citations
- Electric-field control of ferromagnetism in (Ga,Mn)As (2006) — 140 citations
- Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magn (2006) — 230 citations
- Dependence of Giant Tunnel Magnetoresistance of Sputtered CoFeB/MgO/CoFeB Magnetic Tunnel Junctions on MgO Barrier Thickness and Annealing Temperature (2005) — 232 citations
- Temperature dependent magnetic anisotropy in (Ga, Mn)As layers (2002) — 141 citations
- Current-Driven Magnetization Switching in CoFeB/MgO/CoFeB Magnetic Tunnel Junctions (2005) — 193 citations
- Junction size effect on switching current and thermal stability in CoFeB/MgO perpendicular magnetic tunnel junctions (2011) — 154 citations
- Spin-orbit torque induced magnetization switching in nano-scale Ta/CoFeB/MgO (2015) — 186 citations
- Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm (2014) — 265 citations