Electric-field control of ferromagnetism

By Hideo Ohno, Daichi Chiba, Fumihiro Matsukura, T. Omiya, E. Abe, T. Dietl, Y. Ohno, K. Ohtani. Nature, 2000

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Ultrafast nonthermal photo-magnetic recording in transparent medium (2016, methodology): “After each write-read event the recorded domains were erased by application of an external magnetic field of 80 mT in [1-10] direction.”
Semiconductor spintronics (2002, background): “This demonstrates that the applied field is able to switch the device between ferromagnetic and paramagnetic states [5].”
A ten-year perspective on dilute magnetic semiconductors and oxides. (2010, background): “, the control of magnetism by means of electric field”
Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “…temperature Tc and other magnetic and magneto-transport properties (Chiba et al., 2006a, 2013, 2008, 2003; Mikheev et al., 2012; Niazi et al., 2013; Ohno et al., 2000; Olejńık et al., 2008; Owen et al., 2009; Riester et al., 2009; Sawicki et al., 2010; Stolichnov et al., 2008; Wunderlich et al.,…”
Perpendicular switching of a single ferromagnetic layer induced by in-plane current injection (2011, methodology): “Despite several reports of methods to reverse the polarity of nanosized magnets by means of local electric field”