Magnetic tunnel junction device with perpendicular magnetization films for high-density magnetic random access memory

By N. Nishimura, Tadahiko Hirai, A. Koganei, T. Ikeda, K. Okano, Y. Sekiguchi, Yoshiyuki Osada. 2002

397 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics

View Paper: https://www.semanticscholar.org/paper/4dd18752f677732983c988b4f3db7c2db4338443

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In Atomic and Molecular Physics, and Optics

1. Hideo Ohno
2. Fumihiro Matsukura
3. Michihiko Yamanouchi
4. Shoji Ikeda
5. Shunsuke Fukami
6. T. Dietl
7. V. Joshi
8. Claude Chappert

In Condensed Matter Physics

1. Hideo Ohno

Citations in the corpus

• A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, background): “To attain perpendicular anisotropy, a number of material systems have been explored as electrodes, which include rare-earth/transition-metal alloy”
• MgO/CoFeB/Ta/CoFeB/MgO Recording Structure in Magnetic Tunnel Junctions With Perpendicular Easy Axis (2013, background): “A number of materials with perpendicular magnetic easy axis have been explored for the use as ferromagnetic electrodes in the p-MTJs [7]–[17].”