Tunnel magnetoresistance of 604% at 300K by suppression of Ta diffusion in CoFeB∕MgO∕CoFeB pseudo-spin-valves annealed at high temperature

By Shoji Ikeda, J. Hayakawa, Y. Ashizawa, Y. M. Lee, K. Miura, H. Hasegawa, M. Tsunoda, Fumihiro Matsukura, Hideo Ohno. 2008

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Spin-transfer torque RAM technology: Review and prospect (2012, background): “[21] demonstrated a TMR ratio of more than 600% at room temperature and 1100% at 5 K using pseudo-spin-valve MTJs without an AFM layer annealed at 525 C.”
Roadmap for Emerging Materials for Spintronic Device Applications (2015, methodology): “As shown here, the largest TMR reported to date is 604% at RT using a magnetic tunnel junction (MTJ) of CoFeB/MgO/CoFeB [10].”
Probing and controlling magnetic states in 2D layered magnetic materials (2019, positive): “…effects in spin-filter tunnel junctions incorporating 2D magnetic tunnel barriers 72,86,121,122 is certainly exciting — we have noted that even these first spin-filter devices demonstrated larger TMR ratios than state- of-the-art conventional tunnel junctions 130 , albeit at cryogenic temperatures.”
Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “In this magnetic tunnel junction, owing to specific symmetry mismatch of wave functions at high quality interfaces, the tunneling resistance increases more than sevenfold at room temperature when magnetization of two ferromagnetic layers becomes antiparallel (Ikeda et al., 2008).”
Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, background): “31 (Lee et al., 2006; Ikeda et al., 2008; Karthik et al., 2012).”