Electric-field control of ferromagnetism in (Ga,Mn)As

By Daichi Chiba, Fumihiro Matsukura, Hideo Ohno. 2006

140 citations recorded by the source corpus.

Subfields: Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7f4b3c0505fb890a18741ea1c2294c8f12723597

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Electronic, Optical and Magnetic Materials

1. T. Dietl
2. Hideo Ohno
3. T. Jungwirth

In Materials Chemistry

1. T. Dietl
2. Hideo Ohno
3. T. Jungwirth
4. J. Wunderlich
5. K. Olejník
6. Allan H. MacDonald
7. J. Sinova

Citations in the corpus

• Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, background): “However, the Fermi level is often pinned by gap surface states, which limit the TC changes to about 20 K in (Ga,Mn)As (Chiba et al., 2006a, 2010; Nishitani et al., 2010; Sawicki et al., 2010), even if a polymer electrolyte is employed (Endo et al., 2010a).”
• The emergence of spin electronics in data storage. (2007, unknown): “DMS furthermore open the way to new effects such as tunnelling anisotropic magnetoresistance [83, 84], and for the long term to quantum dot storage devices [85].”
• Spin-dependent phenomena and device concepts explored in (Ga,Mn)As (2013, background): “Another remarkable effect observed in these transistors is the electric field control of the magnetization orientation (Chiba et al., 2006a, 2013, 2008, 2003; Niazi et al., 2013; Olejńık et al., 2008; Owen et al., 2009; Stolichnov et al., 2008; Wunderlich et al., 2007b).”