Effect of high annealing temperature on giant tunnel magnetoresistance ratio of CoFeB/MgO/CoFeB magn

By J. Hayakawa, Shoji Ikeda, Young Min Lee, Fumihiro Matsukura, Hideo Ohno. 2006

230 citations recorded by the source corpus.

The authors report tunnel magnetoresistance (TMR) ratios as high as 472% at room temperature and 804% at 5K in pseudo-spin-valve (PSV) CoFeB∕MgO∕CoFeB magnetic tunnel junctions (MTJs) annealed at 450°C, which is approaching the theoretically predicted value. By contrast, the TMR ratios for exchange-biased (EB) SV MTJs with a MnIr antiferromagnetic layer are found to drop when they are annealed at 450°C. Energy dispersive x-ray analysis shows that annealing at 450°C induces interdiffusion of Mn and Ru atoms into the MgO barrier and ferromagnetic layers in EB-SV MTJs. Mechanisms behind the different annealing behaviors are discussed.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7e8912737750917b4daeeda46634ee95e7d752dc

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In Atomic and Molecular Physics, and Optics

In Electronic, Optical and Magnetic Materials

In Materials Chemistry

Citations in the corpus

Magnetic Tunnel Junctions for Spintronic Memories and Beyond (2007, background): “450% [70], [71], reaching 500% at RT, and 1010% at 5 K [72].”
Oxide Spintronics (2007, background): “Room temperature results using magnetic oxides with higher TC such as Fe3O4 are modest [137], with TMR ratios one order of magnitude smaller than those obtained on last-generation MgO-based MTJs [299].”
Spin-transfer effects in nanoscale magnetic tunnel junctions (2004, background): “Since then, several groups have reported additional improvements in TMR leading to the somewhat staggering current record (that I am aware of presently) of 472 % at room temperature [25, 26].”