Lower-current and fast switching of a perpendicular TMR for high speed and high density spin-transfer-torque MRAM

By T. Kishi, H. Yoda, T. Kai, T. Nagase, E. Kitagawa, M. Yoshikawa, K. Nishiyama, T. Daibou, M. Nagamine, M. Amano and 12 more. 2008 IEEE International Electron Devices Meeting, 2008

224 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Electrical and Electronic Engineering

View Paper: https://www.semanticscholar.org/paper/56c5972b7cb924e9269e69e5a28db7697b34e550

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Hideo Ohno
2. Fumihiro Matsukura
3. Shoji Ikeda
4. Chris Hyung-Il Kim
5. Eugene Chen
6. T. Dietl
7. V. Joshi
8. Claude Chappert

In Condensed Matter Physics

1. Eugene Chen
2. Hideo Ohno

In Electrical and Electronic Engineering

1. Onur Mutlu
2. Shimeng Yu
3. Pai-Yu Chen
4. Hideo Ohno
5. Mahmut Taylan Kandemir
6. Anand Sivasubramaniam
7. Emre Kultursay
8. Chris Hyung-Il Kim

Citations in the corpus

• Emerging Memory Technologies: Recent Trends and Prospects (2016, methodology): “The current trend of STT-MRAM cell design is to switch from the inplane MTJ [Figure 1(a)] to the perpendicular MTJ [Figure 1(b)] to allow better scalability, longer retention, and lower Jc [9], [10].”
• The Promise of Nanomagnetics and Spintronics for Future Logic and Universal Memory (2010, methodology): “Today the lowest STT critical writing current density reported with reasonable storage thermal stability (> 40) was about 1 to 2 � 10 6 A/cm 2 for in-plane MTJ materials [48] and around 2 � 10 6 A/cm 2 for PMTJ materials [ 46 ].”
• A Scaling Roadmap and Performance Evaluation of In-Plane and Perpendicular MTJ Based STT-MRAMs for High-Density Cache Memory (2013, methodology): “well as the previously reported MTJ data in [10], [11].”
• Evaluating STT-RAM as an energy-efficient main memory alternative (2013, background): “Several prior works have proposed the use of STT technology [29], [35] to reduce energy consumption of the processor and caches [17], [20], [27], [53], [56], [57], [62], [67].”
• A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, background): “dtd" [ ]> Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal sta”