Magnetic Tunnel Junctions for Spintronic Memories and Beyond
By Shoji Ikeda, Jun Hayakawa, Young Min Lee, Fumihiro Matsukura, Y. Ohno, Takahiro Hanyu, Hideo Ohno. IEEE Transactions on Electron Devices, 2007
477 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/39acd045b0588bd313ccc12e894960fe3d1cf49c
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Hideo Ohno
- T. Jungwirth
- M. Chshiev
- Bernard Dieny
- Weisheng Zhao
- Fumihiro Matsukura
- Claude Chappert
- A. Manchon
In Condensed Matter Physics
- M. Chshiev
- Bernard Dieny
- T. Jungwirth
- Hideo Ohno
- Burkard Hillebrands
- Weisheng Zhao
- Claude Chappert
- C. Marrows
In Materials Chemistry
- Hideo Ohno
- T. Jungwirth
- C. Marrows
- Fumihiro Matsukura
- M. Chshiev
- A. Manchon
- Bernard Dieny
- Cheolgi Kim
Citations in the corpus
- High Speed, High Stability and Low Power Sensing Amplifier for MTJ/CMOS Hybrid Logic Circuits (2009, methodology): “In particular, Look Up Table (LUT) and Flip-Flop circuits in FPGA programmable logic circuits based on the PCSA sense amplifier demonstrate much higher performances than the earlier propositions [5], [22]–[25].”
- A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, background): “First of all, the thermal stability factor E / k B T of the free (recording) layer needs to be more than 40 (ref”
- The 2017 Magnetism Roadmap (2017, background): “Magnetoresistance of up to 500% has been achieved in MTJ with large resistance area products [148].”
- Bias-voltage dependence of perpendicular spin-transfer torque in asymmetric MgO-based magnetic tunnel junctions (2009, background): “The STT in magnetic tunnel junctions (MTJs) is of particular importance owing to its potential for device application”