Properties of magnetic tunnel junctions with a MgO/CoFeB/Ta/CoFeB/MgO recording structure down to junction diameter of 11 nm

By H. Sato, E. C. Enobio, Michihiko Yamanouchi, Shoji Ikeda, Shunsuke Fukami, S. Kanai, Fumihiro Matsukura, Hideo Ohno. 2014

265 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/7f47ed18dedbf467f726c5d830aebe4189926e2a

Citations in the corpus

• Interface-Induced Phenomena in Magnetism (2016, unknown): “When optimized, with nanosize contacts, these structures have magnetization switching current densities on the order of 10(10) A=m(2) giving switching currents of less than 50 μA, significantly more efficient than magnetic switching driven by a magnetic field due to a nearby current flow (often refe”