Hole-mediated ferromagnetism in tetrahedrally coordinated semiconductors

By T. Dietl, Hideo Ohno, Fumihiro Matsukura. 2000

1,241 citations recorded by the source corpus.

A mean-field model of ferromagnetism mediated by delocalized or weakly localized holes in zinc-blende and wurzite diluted magnetic semiconductors is presented. The model takes into account strong spin-orbit and ki p couplings in the valence band as well as the influence of strain upon the hole density of states. Possible effects of disorder and carrier-carrier interactions, particularly near the metal-to-insulator transition, are discussed. A quantitative comparison between experimental and theoretical results for ~Ga,Mn!As demonstrates that the theory describes the values of the Curie temperatures observed in the studied systems as well as explaining the directions of the easy axes and the magnitudes of the corresponding anisotropy fields as a function of biaxial strain. Furthermore, the model reproduces the unusual sign, magnitude, and temperature dependence of the magnetic circular dichroism in the spectral region of the fundamental absorption edge. Chemical trends and various suggestions concerning design of ferromagnetic semiconductor systems are described.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, Materials Chemistry

View Paper: https://www.semanticscholar.org/paper/3bf78373b41f4787e2458c5a6a33800987602650

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In Atomic and Molecular Physics, and Optics

In Electronic, Optical and Magnetic Materials

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Citations in the corpus

Semiconductor spintronics (2002, background): “The strain dependent easy axis of magnetization as well as the peculiar temperature dependence of magnetic circular dichroism in (Ga,Mn)As [88] are also explained by the model [89].”
Dilute ferromagnetic semiconductors: Physics and spintronic structures (2013, methodology): “Furthermore, hole magnetization Mc, which determines the magnitude of spontaneous magnetization Ms(T ) = M(T ) + Mc(M) was evaluated taking into account the effect of a magnetic field on the valence band (Dietl et al., 2001b; Śliwa and Dietl, 2006, 2013).”
Nonlocal magnetization dynamics in ferromagnetic heterostructures (2004, neutral): “For approximately 5% Mn doping, ~Ω ∼ 0.1 eV (Dietl et al., 2001), so that ΩT2 ∼ 10.”
Anomalous hall effect (2009, background): “Next, we consider the other aspect of the T -symmetry, i.e., the consequences of the T -symmetry of the Hamiltonian which governs the microscopic dynamics of the system.”
Current-induced domain-wall switching in a ferromagnetic semiconductor structure (2004, methodology): “The semiconductor used is an alloy of Mn and GaAs that exhibits carrier-induced ferromagnetis”