Spin transfer in nanomagnetic devices with perpendicular anisotropy
By H. Meng, Jianping Wang. 2006
268 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics
View Paper: https://www.semanticscholar.org/paper/2a9324f3508c5ccbe3b765c1ae5c9a62b1bdf1dc
How researchers see this paper
The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.
In Atomic and Molecular Physics, and Optics
- Hideo Ohno
- Fumihiro Matsukura
- Shoji Ikeda
- A. Hirohata
- Alexander Driskill-Smith
- Vladimir Nikitin
- Eugene Chen
- Steven Watts
In Condensed Matter Physics
- Alexander Driskill-Smith
- Vladimir Nikitin
- Eugene Chen
- Steven Watts
- Avik W. Ghosh
- W. H. Butler
- Daniel Lottis
- Dmytro Apalkov
Citations in the corpus
- Roadmap for Emerging Materials for Spintronic Device Applications (2015, background): “[73] and Meng and Wang [74] also demonstrated the STT switching in CPP-GMR nanopillars with perpendicularly magnetized Co/Ni and Co/Pt multilayers, respectively.”
- A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, background): “dtd" [ ]> Magnetic tunnel junctions (MTJs) with ferromagnetic electrodes possessing a perpendicular magnetic easy axis are of great interest as they have a potential for realizing next-generation high-density non-volatile memory and logic chips with high thermal sta”
- Tunnel Magnetoresistance Over 100% in MgO-Based Magnetic Tunnel Junction Films With Perpendicular Magnetic L1$_{0}$-FePt Electrodes (2008, background): “the critical current density of the STT switching, while maintaining the thermal stability [9], [10].”
- Advances and Future Prospects of Spin-Transfer Torque Random Access Memory (2010, background): “One promising solution reported in literature to solve the problem of conventional in-plane MTJ is to build fully perpendicular MTJ for STT-RAM [14]–[16].”