Influence of perpendicular magnetic anisotropy on spin-transfer switching current in CoFeB∕MgO∕CoFeB magnetic tunnel junctions

By S. Yakata, H. Kubota, Yutaka Suzuki, K. Yakushiji, Akio Fukushima, Shinji Yuasa, K. Ando. 2009

168 citations recorded by the source corpus.

Subfields: Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials

View Paper: https://www.semanticscholar.org/paper/689c99ca4b101760f20b4bd77c06d3745cdb3b4b

How researchers see this paper

The researchers whose trusted networks rank it highest, strongest advocate first. Every researcher gets a different order.

In Atomic and Molecular Physics, and Optics

1. Hideo Ohno
2. Fumihiro Matsukura
3. M. Chshiev
4. Bernard Dieny
5. Shoji Ikeda
6. T. Kawahara
7. R. Takemura
8. Kenchi Ito

In Electronic, Optical and Magnetic Materials

1. Hideo Ohno
2. Fumihiro Matsukura
3. Shoji Ikeda
4. Bernard Dieny
5. M. Chshiev
6. T. Dietl

Citations in the corpus

• Spin-transfer torque RAM technology: Review and prospect (2012, background): “[40] pointed out that Hkp of CoFe alloy increases with its Fe composition.”
• A perpendicular-anisotropy CoFeB-MgO magnetic tunnel junction. (2010, result): “0  nm has an in-plane easy axis with out-of-plane saturation field much smaller than the saturation magnetization M S , consistent with earlier studie”
• Perpendicular magnetic anisotropy at transition metal/oxide interfaces and applications (2017, result): “This trend has been reported in both experimental and theoretical studies (Yakata et al., 2009; Zhang et al., 2014).”