Effect of low-temperature annealing on (Ga,Mn)As trilayer structures
By Daichi Chiba, K. Takamura, Fumihiro Matsukura, Hideo Ohno. 2003
182 citations recorded by the source corpus.
Subfields: Atomic and Molecular Physics, and Optics, Condensed Matter Physics, Materials Chemistry
View Paper: https://www.semanticscholar.org/paper/0ed5fd6b9d28c688ecb1769eced85868181f9bab
How researchers see this paper
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In Atomic and Molecular Physics, and Optics
- Hideo Ohno
- J. Sinova
- T. Jungwirth
- Allan H. MacDonald
- T. Dietl
- Michihiko Yamanouchi
- J. Masek
- Jan Kucera
In Condensed Matter Physics
- J. Sinova
- T. Jungwirth
- M. Katsnelson
- A. Lichtenstein
- V. Irkhin
- R. D. Groot
- Hideo Ohno
- Allan H. MacDonald
In Materials Chemistry
Citations in the corpus
- Half-metallic ferromagnets: From band structure to many-body effects (2007, background): “A clear increase in Curie temperature results (Chiba et al., 2003).”
- Current-induced domain-wall switching in a ferromagnetic semiconductor structure (2004, background): “This structure makes it possible to prepare a domain wall at the boundary of I and II, because the removal of the surface layer results in a change of the coercive force H c , at which magnetization reversal takes place, through a change of T c (ref”
- Theory of ferromagnetic (III, Mn) V semiconductors (2006, background): “The metastable nature of these impurities is manifested by the substantial decrease in their density upon post-growth annealing at temperatures very close to the growth temperatures (Chiba et al., 2003a; Edmonds et al., 2002a; Ku et al., 2003; Stone et al., 2003; Yu et al., 2002).”